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FDN358P Datenblatt

| Telefon | Teilenummer | Paket | Beschreibung |
|---|---|---|---|
| FDN358P | TO-236-3, SC-59, SOT-23-3 | 30V P-CH. FET, 125 MO, SSOT3 | |
| FDN357N | TO-236-3, SC-59, SOT-23-3 | MOSFET N-CH 30V 1.9A SSOT3 | |
| ZXMP3A13FTA | TO-236-3, SC-59, SOT-23-3 | MOSFET P-CH 30V 1.4A SOT23-3 | |
| NDS355AN | TO-236-3, SC-59, SOT-23-3 | Trans MOSFET N-CH 30V 1.7A 3-Pin SuperSOT T/R | |
| FDN361BN | TO-236-3, SC-59, SOT-23-3 | MOSFET N-CH 30V 1.4A SSOT3 |
Metal Oxide Silicon Field Effect Transistors commonly known as MOSFETs are electronic devices used to switch or amplify voltages in circuits. It is a voltage controlled device and is constructed by three terminals.
When using the MOSFET as a switch we can drive the MOSFET to turn 'ON' faster or slower, or pass high or low currents. This ability to turn the power MOSFET 'ON' and 'OFF' allows the device to be used as a very efficient switch with switching speeds much faster than standard bipolar junction transistors.
The main advantage of MOSFET is that there is no gate current i.e. it does not have any input current. It has a very high input impedance due to the insulation layer. It consumes negligible energy in its operation due to a very low leakage current. It has a very high switching speed.
Datenblatt
| Menge. | Stückpreis |
|---|---|
| 1+: | $0.57012 |
| 10+: | $0.53785 |
| 100+: | $0.50740 |
| 500+: | $0.47868 |
| 1000+: | $0.45159 |
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